tsm 22p10 - 100 v p - channel power mosfet 1 / 7 version: a14 to - 220 ito - 220 key parameter performance parameter value unit v ds - 100 v r ds(on) (max) v gs = - 10v 1 4 0 m v gs = - 4 .5v 1 7 0 q g 42 nc application l networking l load switch l led applications block diagram p - channel mosfet ordering information part no. package packing tsm22p10cz c 0g to - 2 20 50 pcs / tube tsm22p10ci c0g i to - 2 20 50 pcs / tube note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm a ntimony compounds absolute maximum rating s ( t c = 25 c unless otherwise noted ) parameter symbol limit unit to - 220 ito - 220 drain - source voltage v ds - 100 v gate - source voltage v gs 25 v continuous drain current (note 1) t c = 25 c i d - 22 a t c = 1 00 c - 14 a pulsed drain current (note 2 ) i dm - 88 a power dissipation @ t c = 25 c p d 125 48 w operating junction temperature t j 150 c storage temperature range t stg - 55 to +150 c thermal performance parameter symbol limit unit to - 220 ito - 220 thermal resistance - junction to case r ? jc 1.0 2.6 c /w thermal resistance - junction to ambient r ? ja 62 pin definition : 1. gate 2. drain 3. source
tsm 22p10 - 100 v p - channel power mosfet 2 / 7 version: a14 electrical specifications ( t c = 25 c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = - 250 a bv dss - 100 -- -- v drain - source on - state resistance v gs = - 10v, i d = - 20a r ds(on) -- 115 1 4 0 m ? v gs = - 4.5v, i d = - 10a -- 1 3 0 1 7 0 gate threshold voltage v ds = v gs , i d = - 250a v gs(th) - 1 -- - 3 v zero gate voltage drain current v ds = - 100v, v gs = 0v i dss -- -- - 1 a v ds = - 80v, t j = 125 c -- -- - 10 gate body leakage v gs = 2 5 v, v ds = 0v i gss -- -- 100 na dynamic total gate charge (note 3,4 ) v ds = - 50v, i d = - 2 0a, v gs = - 1 0v q g -- 42 -- nc gate - source charge (note 3,4 ) q gs -- 8 -- gate - drain charge (note 3,4 ) q gd -- 5.6 -- input capacitance v ds = - 30v, v gs = 0v, f = 1.0mhz c iss -- 2250 -- pf output capacitance c oss -- 130 -- reverse transfer capacitance c rss -- 90 -- switching turn - on delay time (note 3,4 ) v dd = - 30v, i d = - 1a, v gs = - 10v, r g = 6 ? t d(on) -- -- -- ns turn - on rise time (note 3,4 ) t r -- -- -- turn - off delay time (note 3,4 ) t d(off) -- -- -- turn - off fall time (note 3,4 ) t f -- -- -- source - drain diode ratings and characteristic maximum continuous drain - source diode forwar d current integral reverse diode in the mosfet i s -- -- - 22 a maximum pulse drain - source diode forward current i s m -- -- - 88 a diode - source forward voltage v gs = 0v , i s = - 1a v sd -- -- - 1.1 v note : 1. limited by maximum junction temperature 2. pulse width l imited by safe operating area 3. pulse test: pulse width "d 300 s , duty cycle "d 2% 4. switching time is essentially independent of operating temperature.
tsm 22p10 - 100 v p - channel power mosfet 3 / 7 version: a14 electrical characteristics curve continuous drain current vs. t c normalized r ds (on) vs. t j threshold voltage vs. junc tion temperature gate charge waveform maximum safe operating area (to - 220) maximum safe operating area (ito - 220) - i d , continuous drain current (a) t c , case temperature ( c ) normalized on resistance (m w ) t j , junction temperature ( c ) normalized gate threshold voltage (v) t j , junction temp erature ( c ) qg, gate charge (nc ) - v gs , gate to source voltage (v) - i d , continuous drain current (a) - v ds , drain to source voltage (v) - i d , continuous drain current (a) - v ds , drain to source voltage (v)
tsm 22p10 - 100 v p - channel power mosfet 4 / 7 version: a14 electrical characteristics curve normalized thermal transient impedance (to - 220) normalized thermal transient impedance (ito - 220) normalized thermal response (r ? jc ) square wave pulse duration (s) normalized thermal response (r ? jc ) square wave pulse duration (s)
tsm 22p10 - 100 v p - channel power mosfet 5 / 7 version: a14 to - 220 mechanical drawing unit: millimeters marking diagram g = halogen free product y = year code ww = week code (01~52) f = factory code
tsm 22p10 - 100 v p - channel power mosfet 6 / 7 version: a14 ito - 220 mechanical drawing unit: millimeters marking diagram g = halogen free product y = year code ww = week code (01~52) f = factory code
tsm 22p10 - 100 v p - channel power mosfet 7 / 7 version: a14 notice specifications of the products displayed herein are subject t o change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/ or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in m edical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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